Üreticiler

Infineon FF1200R17KE3 Igbt Unit Unit

Lütfen Teklif İsteyiniz

Ürün No	FF1200R17KE3 Igbt
Üretici	Infineon
PDF Doküman	İndir

Infineon markalı, ürün kodu FF1200R17KE3 Igbt olan Infineon FF1200R17KE3 Igbt Unit ürününün fiyat ve detaylarını aşağıda inceleyebilirsiniz. Teklif almak için online teklif formunu doldurunuz.

Detaylı Bilgi - Infineon FF1200R17KE3 Igbt Unit Unit

anufacturer:
Infineon

Product Category:
IGBT Modules

RoHS:
N

Configuration:
Dual

Collector- Emitter Voltage VCEO Max:
1700 V

Collector-Emitter Saturation Voltage:
2 V

Continuous Collector Current at 25 C:
1600 A

Gate-Emitter Leakage Current:
400 nA

Pd - Power Dissipation:
5.95 kW

Package/Case:
IHM130-10

Minimum Operating Temperature:
- 40 C

Maximum Operating Temperature:
+ 125 C

Packaging:
Tray

Height:
38 mm

Length:
140 mm

Width:
130 mm

Brand:
Infineon Technologies

Mounting Style:
SMD/SMT

Maximum Gate Emitter Voltage:
20 V

Product Type:
IGBT Modules

Factory Pack Quantity:
2

Subcategory:
IGBTs

Part # Aliases:
FF1200R17KE3NOSA1 SP000100586 FF1200R17KE3NOSA1

Datasheet(s) [PDF]

infineon-ff1200r17ke3-igbt-unit-463892.pdf

Online Teklif Al

info@im-tek.com.tr

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Üreticiler

Üreticiler

Infineon FF1200R17KE3 Igbt Unit Unit

Detaylı Bilgi - Infineon FF1200R17KE3 Igbt Unit Unit

anufacturer:Infineon

Product Category:IGBT Modules

RoHS:N

Configuration:Dual

Collector- Emitter Voltage VCEO Max:1700 V

Collector-Emitter Saturation Voltage:2 V

Continuous Collector Current at 25 C:1600 A

Gate-Emitter Leakage Current:400 nA

Pd - Power Dissipation:5.95 kW

Package/Case:IHM130-10

Minimum Operating Temperature:- 40 C

Maximum Operating Temperature:+ 125 C

Packaging:Tray

Height:38 mm

Length:140 mm

Width:130 mm

Brand:Infineon Technologies

Mounting Style:SMD/SMT

Maximum Gate Emitter Voltage:20 V

Product Type:IGBT Modules

Factory Pack Quantity:2

Subcategory:IGBTs

Part # Aliases:FF1200R17KE3NOSA1 SP000100586 FF1200R17KE3NOSA1

Online Teklif Al

Tavsiye Edilen Diğer Ürünler

anufacturer:
Infineon

Product Category:
IGBT Modules

RoHS:
N

Configuration:
Dual

Collector- Emitter Voltage VCEO Max:
1700 V

Collector-Emitter Saturation Voltage:
2 V

Continuous Collector Current at 25 C:
1600 A

Gate-Emitter Leakage Current:
400 nA

Pd - Power Dissipation:
5.95 kW

Package/Case:
IHM130-10

Minimum Operating Temperature:
- 40 C

Maximum Operating Temperature:
+ 125 C

Packaging:
Tray

Height:
38 mm

Length:
140 mm

Width:
130 mm

Brand:
Infineon Technologies

Mounting Style:
SMD/SMT

Maximum Gate Emitter Voltage:
20 V

Product Type:
IGBT Modules

Factory Pack Quantity:
2

Subcategory:
IGBTs

Part # Aliases:
FF1200R17KE3NOSA1 SP000100586 FF1200R17KE3NOSA1